|
Substrate material |
N type, phosphorus doped, monocrystalline silicon wafer |
|
Thickness |
130±10%μm |
|
Dimension |
210mm*210mm±0.25mm,φ295mm±0.25mm |
|
Front side |
18 Bus Bars, 210±10% fingers, blue anti-reflection layers (SiNx) |
|
Rear side |
18 Bus Bars, 204±10% fingers, blue anti-reflection layers (SiNx) |


京公网安备 11010802043282号