|
Substrate material |
N type, phosphorus doped, monocrystalline silicon wafer |
|
Thickness |
130±10%μm |
|
Dimension |
210mm*210mm±0.25mm,φ295mm±0.25mm |
|
Front side |
18 Bus Bars, 210±10% fingers, blue anti-reflection layers (SiNx) |
|
Rear side |
18 Bus Bars, 204±10% fingers, blue anti-reflection layers (SiNx) |
1/1
N-Type TOPCon Double-sided Cell HG210N
Negotiable
China
Building 72, Jinrun Industrial Park, Gaochang Town, Xuzhou District, Yibin City, Sichuan Province
+86 13925933306
+86 13925933306
lianxy@sunsyncgroup.com
Product Parameters
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