Recently, Shanghai Jiachi Power Technology Co., Ltd. (hereinafter referred to as "Jiachi Power"), located in the Shanghai Fourth-Generation Semiconductor Industrial Cluster, has made a major breakthrough in the field of ultra-wide bandgap semiconductors, completing the first-stage iterative tape-out verification of gallium oxide (β-Ga₂O₃) vertical MOSFET chips. Relying on device structure innovation and independent research and development of core processes, the team successfully developed the world's first enhancement-mode gallium oxide vertical MOSFET device with a conduction current exceeding 1 ampere and a breakdown voltage greater than 900 volts. Multiple core performance metrics have set new international publicly reported records, opening up the critical pathway for the commercialization of gallium oxide power devices. This marks a leading technological leap for China in the field of fourth-generation semiconductor core devices.
Schematic diagram of the research results. Image provided by the interviewee.
As a core material of the new generation of ultra-wide bandgap semiconductors, gallium oxide possesses characteristics such as ultra-high breakdown field strength, low conduction loss, and high-temperature resistance. It is an important development direction for high-voltage, high-efficiency power devices and can be widely used in scenarios such as high-end new energy equipment, high-end industrial power, smart grids, and energy storage systems. It is also a strategic high ground contested by the global power semiconductor industry.
According to the technical team, for a long time, the challenge of stable and controllable p-type implantation doping has been a world-class technical bottleneck for the high-power and commercialization of gallium oxide MOSFETs. Constrained by this barrier, vertical-structure gallium oxide MOSFETs worldwide generally suffer from shortcomings such as weak current conduction capability, insufficient voltage withstand, and relatively high leakage. Prior to this, there had been no device results in publicly available literature or industry reports with conduction current breaking through the ampere level, severely slowing down the industrialization process of gallium oxide.
Facing this common industry challenge, the technical team of Jiachi Power broke away from traditional R&D approaches and carried out systematic technological tackling, achieving two original core breakthroughs. In terms of device architecture, the team independently developed a novel gallium oxide MOSFET cell and terminal-specific structure, finely regulating the internal structure and electric field distribution of the device to effectively enhance device stability and breakdown voltage withstand capability. At the process level, they conquered the channel self-aligned ion implantation process for gallium oxide MOSFETs, solving challenges such as precise channel fabrication and uniform doping control for vertical devices, and established a dedicated process system suitable for high-power gallium oxide devices, successfully completing the first full tape-out and electrical performance testing.
Researchers examining measured data. Image provided by the interviewee.
It is reported that the measured data from this tape-out reached the best international level of the same period, highlighting its industrialization value. First, the team's independently developed channel self-aligned ion implantation process adapted for vertical-structure gallium oxide MOSFETs fills the process gap for high-power devices in the industry, laying a process foundation for the scaled fabrication of ampere-level and higher-specification gallium oxide MOSFETs. Second, the device has a measured threshold voltage of 3.9 volts and can operate stably in enhancement mode, with parameter performance meeting the requirements for commercial power device use. Third, the device achieves a conduction current of 1.2 amperes and a specific on-resistance of 33 milliohm·square centimeter. After searching global academic literature and publicly available industrial results, this is the world's first vertical-structure gallium oxide MOSFET with conduction current exceeding 1 ampere, setting a new technical record. Fourth, the device is designed for a 750-volt voltage platform, with a measured breakdown voltage exceeding 900 volts and leakage current controlled within 3 microamperes. The leakage level has approached that of mature commercial silicon and silicon carbide power devices, resolving the high-leakage pain point of gallium oxide devices, with outstanding commercialization adaptability.
"This stage of tape-out results has fully validated the feasibility of our original device structure and independently developed ion implantation process route. It is a key step for gallium oxide power devices moving from laboratory proof-of-principle to commercial engineering implementation," the technical team told the Science and Technology Daily reporter.
It is reported that next, Jiachi Power will continue to deepen its efforts in the ultra-wide bandgap semiconductor track, iteratively optimizing device structures, process parameters, and epitaxial material matching systems, continuously improving device reliability, consistency, and overall performance, accelerating chip iteration and upgrading, product sample verification, and industrialization process finalization, helping China's fourth-generation semiconductor industry achieve lane-changing overtaking, and providing support for strategic emerging industries such as high-end equipment, new energy, and new-type power systems.