Silicon Carbide Devices price_Manufacturer_How much

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Silicon Carbide Devices

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XI'AN XD POWER SYSTEMS CO., LTD.

Located Region:

China

Address:

No.2 West Auxiliary Road, West Third Ring, Yanta District, Xi’an City, Shaanxi Province

Biz Consulting:

029-88828215

E-mail:

289817457@qq.com

Online Contact

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Due to the inherent material properties of silicon carbide (wide bandgap, high breakdown field strength, low on-resistance, low thermal resistance, etc.), silicon carbide devices, compared to silicon-based components, are suitable for high junction temperatures, high breakdown voltages, high power, and large currents, meeting the new development demands of the power electronics industry.

o Silicon Carbide Schottky Barrier Diode (SiC SBD)

Ultra-fast switching speed and minimal reverse recovery current significantly reduce switching losses, achieving outstanding energy efficiency.

o Silicon Carbide Field-Effect Transistor (SiC MOSFET)

Low loss, faster switching speed, high blocking voltage, capable of operating in high-temperature environments, enabling system miniaturization.

o Silicon Carbide Power Module (SiC Power Module)

Modular integrated packaging of multiple silicon carbide chips further enhances the current capacity of silicon carbide power devices. Compared to silicon-based power modules, both switching losses and volume are significantly reduced. Its unique advantages, including high voltage, large current, high temperature, high frequency, and low loss, greatly improve existing energy conversion efficiency.

SiCMOSFET
No.	Model	Blocking voltage V_Dss (V)	Continuous leakage current I_D (A)	On-resistance R_OS (V), Typ.(mΩ)	Drive voltage (V)	Encapsulation form
No.	Model	Blocking voltage V_Dss (V)	Continuous leakage current I_D (A)	Gate-source voltage V_Gs = 20V	Drive voltage (V)	Encapsulation form
1	SA1M12000020D	1200	120	20	20	TO-247 (3pin)
2	SA1M12000040D	1200	80	40	20
3	SA1M12000065D	1200	40	65	20
4	SA1M12000120D	1200	25	120	20
5	SA1M12000160D	1200	20	160	20
6	SA1M17000040D	1700	60	40	20
7	SA1M17000080D	1700	35	80	20
8	SA1M17001000D	1700	2	1000	20
9	SA1M33000060	3300	45	60	20	Bare core
10	SA1M33001000	3300	2	1000	20	Bare core

SiCSBD
No.	Model	Absolute maximum rating				Electrical characteristics		Encapsulation form
No.	Model	Maximum reverse peak voltage VRM(V)	Maximum reverse voltage VR(V)	Rated current IF(A)	Max. inrush current IFSM(A)	Forward voltage VF(V), Typ.	Reverse saturation leakage current IR(μA),Max	Encapsulation form
1	SA1D065001SA	650	650	1	7	1.5	10	TO-220AC (2pin)
2	SA1D065002SA	650	650	2	15	1.5	10
3	SA1D065004SA	650	650	4	25	1.5	20
4	SA1D065006SA	650	650	6	45	1.5	30
5	SA1D065008SA	650	650	8	50	1.5	40
6	SA1D065010SA	650	650	10	55	1.5	50
7	SA1D065012SA	650	650	12	60	1.5	60
8	SA1D065015SA	650	650	15	80	1.5	70
9	SA1D120001SA	1200	1200	1	6	1.5	10
10	SA1D120002SA	1200	1200	2	12	1.5	20
11	SA1D120004SA	1200	1200	4	24	1.5	25
12	SA1D120006SA	1200	1200	6	36	1.5	30
13	SA1D120008SA	1200	1200	8	48	1.5	35
14	SA1D120010SA	1200	1200	10	60	1.5	40
15	SA1D065001SC	650	650	1	7	1.5	10	TO-247 (2pin)
16	SA1D065002SC	650	650	2	15	1.5	10
17	SA1D065004SC	650	650	4	25	1.5	20
18	SA1D065006SC	650	650	6	45	1.5	30
19	SA1D065008SC	650	650	8	50	1.5	40
20	SA1D065010SC	650	650	10	55	1.5	50
21	SA1D065012SC	650	650	12	60	1.5	60
22	SA1D065015SC	650	650	15	80	1.5	70
23	SA1D065020SC	650	650	20	100	1.5	80
24	SA1D065030SC	650	650	30	150	1.5	100
25	SA1D065040SC	650	650	40	180	1.5	100
26	SA1D065050SC	650	650	50	200	1.5	100
27	SA1D120001SC	1200	1200	1	6	1.5	10
28	SA1D120002SC	1200	1200	2	12	1.5	20
29	SA1D120004SC	1200	1200	4	24	1.5	25
30	SA1D120006SC	1200	1200	6	36	1.5	30
31	SA1D120008SC	1200	1200	8	48	1.5	35
32	SA1D120010SC	1200	1200	10	60	1.5	40
33	SA1D120020SC	1200	1200	20	120	1.5	80
34	SA1D120030SC	1200	1200	30	180	1.5	90
35	SA1D120040SC	1200	1200	40	220	1.5	100
36	SA1D120020DD	1200	1200	10/20 *	60/120 *	1.5	70	TO-247 (3pin)
37	SA1D120040DD	1200	1200	20/40 *	120/240 *	1.5	160	TO-247 (3pin)
38	SA1D330001S	3300	3300	1	4	1.75	50	Bare core
39	SA1D500002S	5000	5000	2	6	3.8	100	Bare core