Gallium nitride heterojunction materials possess excellent characteristics such as wide bandgap, high breakdown field strength, and high electron saturation velocity, making them ideal materials for manufacturing high-power microwave devices.
Gallium Nitride Microwave Diode (GaN SBD)
Gallium nitride microwave diodes are core components in microwave circuits for rectification, limiting, detection, and switching. High-power microwave diodes are urgently needed core components for rectification at the receiving end of microwave power transmission and for limiters protecting against high-power microwave damage. Wide-bandgap semiconductor gallium nitride has unique advantages in high-power microwave applications.
Application Areas
o Microwave and millimeter-wave receiving devices, widely used in communications, radar, navigation, electronic countermeasures, space technology, measurement and control, and aerospace.
o Mixers, widely applied in small-scale mobile communication projects for production, security, and field engineering.
o Detectors, extensively used in scalar network analyzers, six-port networks, microwave instantaneous receivers, and other systems.
o Limiters, broadly applied in core modules for radar communication.
