Yinghansi Signs Agreement to Settle in Wuhan, China, Accelerating R&D and Production of MOCVD Equipment

en.Wedoany.com Reported - On July 7, Yinghansi Technology Co., Ltd. signed an agreement to settle in Wuhan Future Science and Technology City, focusing on the R&D and production of MOCVD equipment.

Founded in 2024, Yinghansi covers multiple semiconductor material systems including gallium nitride, gallium carbide, gallium arsenide, and indium phosphide. Its products are applied in areas such as fast-charging chips for mobile phones, power devices for 5G base stations, and power modules for new energy vehicles. The company provides end-to-end solutions for semiconductor epitaxial equipment and has raised over 100 million yuan in cumulative funding since its establishment more than two years ago.

MOCVD equipment is a key epitaxial tool for compound semiconductor optoelectronic devices, growing single-crystal films on substrates through chemical vapor deposition to determine the optoelectronic performance of chips. Currently, overseas companies hold a significant market share, while domestic manufacturers have a limited share.

According to Jiang Qi, Chairman of Yinghansi, after settling in, the company will collaborate with Jiufengshan Laboratory and upstream and downstream enterprises in the area to accelerate the R&D iteration and production delivery of domestically produced MOCVD equipment. Equipment debugging is already underway in Optics Valley, and the company will subsequently move into the Hi-Tech Laser Industry Base, building a production base covering over 2,000 square meters to achieve batch shipments of multiple MOCVD equipment models.

Optics Valley has gathered over 300 integrated circuit companies. As the chain leader for compound semiconductors, Jiufengshan Laboratory has attracted more than 50 upstream and downstream enterprises to settle in Optics Valley since its establishment in 2021, forming a complete industrial chain covering compound semiconductor materials, devices, and packaging testing.