en.Wedoany.com Reported - The 7th Symposium on Third-Generation Semiconductor Materials and Equipment will be held in Beijing, China, in July 2026. Co-hosted by the Third-Generation Semiconductor Industry Technology Innovation Strategic Alliance and the China Electronic Special Equipment Industry Association, this symposium aims to unite industry forces to promote collaborative innovation and industrialization of third-generation semiconductor materials, equipment, and applications.
Third-generation semiconductor materials, represented by wide-bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN), exhibit excellent properties including large bandgap width, high thermal conductivity, strong radiation resistance, and high electron saturation drift velocity. Against the backdrop of rapidly growing demand in emerging fields such as Vehicles" target="_blank">new energy vehicles, photovoltaic energy storage, smart grids, and 5G communications, third-generation semiconductors have become a strategic high ground in global semiconductor industry competition. In recent years, China has continuously increased R&D investment in the third-generation semiconductor field, with the industrial chain gradually improving, achieving significant progress in areas from material substrates and epitaxial growth to device manufacturing and packaging testing.
This symposium is another industry event following the successful holding of the previous six sessions. The conference will invite experts, scholars, and industry representatives from universities, research institutes, and upstream and downstream enterprises in the industrial chain to conduct in-depth exchanges on core topics such as third-generation semiconductor material preparation, equipment localization, process technology breakthroughs, and application solutions. The symposium aims to build an integrated collaborative innovation platform covering "materials-process-equipment-applications," promoting deep integration of industry, academia, research, and application, and providing technical and intellectual support for accelerating the high-quality development of the domestic third-generation semiconductor industry.
According to reports, member units of the Third-Generation Semiconductor Industry Technology Innovation Strategic Alliance and the China Electronic Special Equipment Industry Association can attend the conference free of charge, with a limit of 3 people for vice-chairman units, 2 people for council member units, and 1 person for regular member units. The attendance fee for non-member units is 800 RMB per person (including materials and lunch fees). The registration deadline for the conference is 12:00 on July 15, 2026. During the symposium, exhibition and business cooperation sessions will also be arranged, providing opportunities for technical exchange and market matching for enterprises in the industrial chain. For detailed agenda, participation methods, and business cooperation information, inquiries can be made through the alliance secretariat or the association secretariat.
Currently, the global semiconductor industry is undergoing profound changes. As an important technical direction in the post-Moore era, third-generation semiconductors, with their material innovation and equipment breakthroughs, are of great significance for enhancing the core competitiveness of China's power semiconductor and integrated circuit industries. The convening of this symposium will provide an important platform for technical exchange and achievement display, and is expected to further promote technological progress and industrial application of third-generation semiconductor materials and equipment.
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