en.Wedoany.com Reported - Sivers Semiconductors and SemiNex have announced the launch of a next-generation Indium Phosphide (InP) light source program for AI data center interconnects, with an initial contract value of approximately $3.4 million. Sivers Semiconductors is a photonics and wireless technology company, while SemiNex specializes in the development of high-power InP laser diodes, DFB lasers, semiconductor optical amplifiers (SOAs), and external cavity lasers.

The program focuses on three application areas: high-power external laser sources required for co-packaged optics (CPO), high-channel-count DFB arrays for wavelength division multiplexing links, and SOA gain stages for extending optical transmission distances. As optical components migrate from the faceplate level to the package level, the impact of per-wavelength power, electro-optical conversion efficiency, and thermal stability on architecture scalability is becoming increasingly significant, elevating the light source from a component selection issue to a system-level design challenge.

Customer sampling and early production ramp-up are targeted for the second half of 2027.

Vickram Vathulya, CEO of Sivers Semiconductors, stated that the advanced light sources required for next-generation optical networks in AI factories are just as critical as compute, memory, and silicon photonics components, and that the company values its partnership with SemiNex, aiming to scale competitive light source solutions to the market by combining both parties' technologies.

Ronald Moore, CEO of SemiNex, noted that the optical layer is becoming a constraint on AI infrastructure scaling, and that the industry needs higher power and greater efficiency across more wavelengths, which cannot be achieved simply by pushing existing devices harder. These improvements stem from design and process enhancements in InP itself, which is precisely the focus of the two teams' collaboration.