A research team from the University of Minnesota Twin Cities has published their latest findings in Advanced Materials, developing a new spintronic material based on Ni₄W (nickel-tungsten alloy) that can significantly improve the operating efficiency of computer memory while reducing power consumption. This patented technology offers a fresh approach for the development of next-generation storage devices.

The team discovered that the Ni₄W material possesses a unique low-symmetry structure capable of generating highly efficient multidirectional spin-orbit torque (SOT). Senior author Professor Jian-Ping Wang stated: "Ni₄W enables magnetic state switching without an external magnetic field, which will dramatically reduce the power consumption required for data writing." Experimental results show that the material exhibits excellent spin Hall efficiency whether used alone or combined with a tungsten layer.

The technology offers three major advantages:

Improved energy efficiency: lower operating power consumption compared to traditional materials

Ease of manufacturing: uses common metals and standard fabrication processes

Broad applicability: suitable for smartphones, data centers, and other devices

Co-first author Yifei Yang noted: "The multidirectional spin currents generated by Ni₄W create opportunities for developing high-speed, low-power spintronic devices." The team is currently working on miniaturizing the material to fit smaller-scale electronic components.

The research was a collaborative effort involving multiple departments at the University of Minnesota, encompassing material characterization, theoretical calculations, and device testing. The team plans to further optimize the material’s performance and advance its application in real-world memory products.