en.Wedoany.com Reported - Ampleon has launched the C5H4850N55D, a high-efficiency GaN RF power transistor. This 55 W GaN Doherty transistor operates across a frequency range of 4800 MHz to 5000 MHz, designed to meet the demands of 5 GHz base stations and multi-carrier communication systems.
As network operators continue to enhance data throughput and energy efficiency, RF power amplifier designers face increasing pressure to maintain linearity and efficiency across wide bandwidths and high peak-to-average power ratios. The C5H4850N55D achieves efficient Doherty operation through a highly optimized internally matched GaN solution, while simplifying design and reducing workload.
In typical Doherty applications, this device achieves approximately 50% drain efficiency across the entire frequency band, with a gain level of 14 dB under W-CDMA conditions, supporting efficient amplification of high peak-to-average power ratio signals. Its digital pre-distortion capability helps enhance system-level linearity, meeting the spectral requirements of modern communication systems. The transistor supports output power up to 45 dBm under compression, providing headroom for multi-carrier and broadband applications.
The C5H4850N55D can withstand load variations up to a 10:1 VSWR under mismatch conditions, ensuring stable performance in real-world deployments. The device is housed in a compact 8 mm x 8 mm QFN package, and its internally matched input design reduces the complexity of external matching networks, facilitating high power density and efficient use of board space.
The C5H4850N55D is now available through Ampleon's global distribution network.
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