Infineon Wins Two GaN Patent Infringement Rulings in Germany

en.Wedoany.com Reported - Infineon Technologies has secured two patent infringement rulings against Innoscience at the Munich I Regional Court in Germany, prohibiting Innoscience from manufacturing, selling, and marketing the infringing products in Germany.

One ruling involves a patent infringement, while the other concerns a utility model. The court also ordered Innoscience to compensate Infineon for damages resulting from the infringement. These rulings further solidify Infineon's intellectual property portfolio in the field of gallium nitride (GaN) power semiconductors.

These rulings represent the third and fourth adverse decisions faced by Innoscience in related legal proceedings. Infineon noted that courts and regulatory authorities in Germany and the United States have repeatedly found Innoscience's products to infringe its patents. Previously, a German court ruled against Innoscience on August 1, 2025, and the full U.S. International Trade Commission (ITC) determined on May 7, 2025, that Innoscience infringed an Infineon GaN patent. Patent infringement lawsuits involving other Infineon technologies are still ongoing in Germany and the United States.

GaN technology is gaining increasing attention in power electronics due to its ability to improve efficiency, reduce switching losses, and enable system miniaturization. This technology has been applied in areas such as renewable energy systems, electric vehicle powertrains, industrial automation equipment, and data center power supplies.

Infineon continues to invest in this field, with its GaN patent portfolio comprising approximately 450 patent families covering device structures, manufacturing processes, and system-level innovations. Through technology development and intellectual property deployment, the company aims to strengthen its market position in energy-efficient power electronics and serve long-term trends such as decarbonization and digital transformation.

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