en.Wedoany.com Reported - Micron Technology has announced a long-term investment plan in the United States exceeding $250 billion, a significant increase from last year's target of $200 billion. The plan aims to shift 40% of the company's DRAM (Dynamic Random Access Memory) production to the U.S.
On July 9, Micron Technology announced plans to invest over $250 billion in the U.S. by 2035 for factory construction and technology R&D. Specific projects include building a second advanced memory chip manufacturing facility in Boise, Idaho, and expanding an existing facility in Manassas, Virginia. Additionally, tens of billions of dollars will be allocated to technology R&D.
As part of this investment plan, Micron Technology announced an investment of up to $30 billion in the U.S. to strengthen the American semiconductor supply chain ecosystem, build critical semiconductor manufacturing capabilities essential for future technological innovation, and meet the demand for advanced memory in artificial intelligence and other data-intensive applications. Of this amount, $500 million will be used to provide strategic financing to GlobalWafers, supporting the construction of a 300mm prime silicon wafer manufacturing facility in Sherman, Texas. The two companies have also signed a 10-year supply agreement to ensure Micron has sufficient silicon wafer capacity and plan to collaborate on developing next-generation wafer technologies and process innovations.
At the opening of trading on July 9, Micron's stock rose over 7%, with a market capitalization of $1.2 trillion.
Prior to this investment announcement, the South Korean government, together with Samsung Group and SK Group, unveiled a total corporate domestic investment plan of 4,755 trillion won on June 29, focusing on three core projects: semiconductors, physical AI, and AI data centers. Among these, the southwestern region of South Korea plans to invest 800 trillion won (approximately $518 billion) to build four semiconductor manufacturing plants, with Samsung Electronics (005930.KS) and SK Hynix (000660.KS) each responsible for two. Specifically, SK Hynix plans to invest 1,100 trillion won to expand DRAM and NAND flash supply, while Samsung plans to invest 400 trillion won in Gwangju to build a new wafer manufacturing plant and 56 trillion won in Cheonan and Onyang to build a new HBM (High Bandwidth Memory) plant.
Samsung Electronics, SK Hynix, and Micron Technology are the world's three largest DRAM manufacturers. These investment plans demonstrate the determination of international DRAM manufacturers to expand memory capacity and enhance domestic manufacturing capabilities. TrendForce analyst Xu Jiayuan stated that each supplier's capacity expansion plans will ultimately depend on specific execution and customer structure.
Chinese DRAM manufacturer Changxin Technology has initiated its IPO process on the STAR Market, planning to raise 29.5 billion yuan. The funds will be used for DRAM memory technology upgrades, forward-looking technology R&D, and wafer manufacturing mass production line technology upgrades and renovations.
