A German research team has achieved a major breakthrough in the photoelectric control of two-dimensional semiconductors. Scientists from Bielefeld University and the Leibniz Institute for Solid State and Materials Research Dresden have developed a novel terahertz light control technique, with results published in Nature Communications.

The team innovatively designed special nanoantenna structures, successfully converting terahertz light pulses into strong vertical electric fields within two-dimensional semiconductor materials. Professor Dmitri Turchinovich from Bielefeld University's Department of Physics stated: "This technology breaks through the speed limitations of traditional electronic gating, with response times reaching the picosecond level." Experiments demonstrated that the method can effectively modulate the optical and electronic properties of materials such as molybdenum disulfide.

The key breakthrough lies in achieving strong electric field modulation of several megavolts per centimeter while maintaining excellent compatibility with industrial manufacturing processes. Lead researcher Dr. Tomoki Hiraoka noted that terahertz-light-induced coherent effects offer entirely new ideas for developing next-generation optoelectronic devices. Through multiple experimental optimizations, the Dresden team successfully fabricated high-performance 3D-2D nanoantenna structures.

This technology holds promise for applications in ultra-high-speed communications, quantum computing, and other fields, opening new pathways for the development of next-generation optoelectronic devices. The research team plans to further refine control precision and explore broader application scenarios.