en.Wedoany.com Reported - Coherent Corp. introduces new thick epitaxy capabilities for silicon carbide to support manufacturing of power devices up to 10kV. The company's 150mm and 200mm epitaxial platforms have demonstrated device performance thresholds exceeding 10kV. This technological breakthrough addresses the demand for higher efficiency and power density in next-generation AI data center power distribution architectures and high-voltage industrial systems.
According to an announcement from Coherent Corp., the thick epitaxy process can increase the voltage withstand rating of silicon carbide devices into the multi-kilovolt range. Gary Ruland, Senior Vice President of Coherent's Silicon Carbide business, pointed out that next-generation data center power architectures and high-voltage industrial systems are key factors driving the adoption of silicon carbide. The new thick epitaxy capability for multi-kilovolt SiC devices enables customers to achieve higher efficiency and power density in large-capacity uninterruptible power supplies for energy infrastructure and advanced power distribution systems for AI data centers. Operating at higher voltages in AI data center scenarios can reduce power distribution losses and improve overall system efficiency.
Coherent Corp. continues to expand its vertically integrated silicon carbide product portfolio, covering substrates to advanced epitaxy. This capability targets application areas such as grid infrastructure, rail transit systems, renewable energy, and fast-charging networks. The expansion of hyperscale AI infrastructure to megawatt-scale deployments is driving the evolution of power conversion architectures towards more compact and efficient designs. Moving power conversion closer to the rack and adopting higher-voltage DC power distribution architectures within data centers is becoming one of the industry's technological evolution directions.
This development occurs against the backdrop of competition within the wide bandgap semiconductor industry to expand supply and reduce cost-per-watt. Companies such as Wolfspeed, onsemi, and STMicroelectronics are investing in silicon carbide materials and larger wafer sizes. Coherent Corp.'s advancement towards 200mm SiC and higher voltage device categories indicates that the next phase of innovation will focus on the synergistic optimization of power electronics thermal management and AI computing infrastructure.
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