en.Wedoany.com Reported - ROHM of Japan announced on the 18th that it has developed a 650V withstand voltage 4th generation IGBT (Insulated Gate Bipolar Transistor) suitable for automotive electric compressors, HV heaters, and industrial equipment inverters. This product achieves industry-leading low loss among 650V automotive-grade devices, while also offering high short-circuit withstand capability and meeting the automotive reliability standard AEC-Q101.

The new product optimizes the device structure, including processes and peripheral structures, to increase current density and reduce both conduction loss and switching loss. The VCE saturation voltage, which characterizes low conduction loss, is 1.55V.

At a Tj (junction temperature) of 25°C, the product ensures a short-circuit withstand capability of 7µs, a performance that typically involves a trade-off with low loss. This characteristic helps enhance the efficiency and reliability of applications.

The product lineup includes 12 models in the TO-247N package (RGAxxTS65HR/RGAxxTS65EHR) and 10 models as bare chips (SG83xxWN). Development is also underway for 12 models in the TO-247-4L package (RGAxxTR65HR/RGAxxTR65EHR).

Mass production of the new products began in May with a production capacity of 1 million units per month. The TO-247N package products are also available for online purchase. Various design models and materials required for circuit design are ready and can be downloaded from the official ROHM website.

ROHM will continue to expand the number of models within the same package and plans to develop small surface-mount IGBT products using the TO-263L package and top-side cooling (TSC) package, aiming to strengthen its lineup of high-performance IGBT products.

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