en.Wedoany.com Reported - At the 2026 European PCIM exhibition in Nuremberg, Germany, Infineon, Mitsubishi Electric, Wolfspeed, Onsemi, and other power electronics companies released their latest generation of wide-bandgap semiconductor power modules and solutions, focusing on improving the efficiency of electric vehicles and renewable energy systems.
Infineon Technologies has launched the EiceDRIVER gate driver for its pure electric vehicle traction inverters. The EiceDRIVER 1EDI3040AS and 1EDI3041AS in this series support both IGBTs and SiC MOSFETs, integrated into a single gate driver IC. They feature real-time gate current regulation, balancing switching speed and electromagnetic interference (EMI), reducing turn-on and turn-off energy losses through precise control of the switching transition. Additionally, the IC manages the turn-off current slew rate to clamp destructive voltage spikes caused by stray inductance, eliminating the need for bulky external snubber circuits.


Mitsubishi Electric and Semikron Danfoss have jointly developed a standardized power module package using an integrated three-level T-type circuit topology. This package combines Mitsubishi Electric's LV100 layout with Semikron Danfoss's SEMITRANS20 geometry, achieving physical product compatibility and enabling manufacturers to unify and standardize physical inverter architectures. The three-level circuit topology switches DC power between three different potential levels, producing an output waveform closer to a pure sine wave, thereby improving conversion efficiency, reducing power losses, and shrinking the size of peripheral filtering and control components.

The Fraunhofer Institute for Applied Solid State Physics IAF demonstrated a compact bidirectional single-phase DC charging converter for electric vehicles, utilizing a monolithic 1200 V GaN power device. The system operates at a high switching frequency of 140 kHz, minimizing the size of passive filtering components. The complete demonstrator (including the plug) measures 8.3 liters and weighs 5.7 kg. This architecture integrates the freewheeling diode directly on the 1200 V GaN chip, eliminating standard external anti-parallel diodes and limiting stray loop inductance. This 3 kW off-board charger, developed from the GaN4EmoBiL project, aims to fill a gap in 800 V bidirectional topologies and can handle a wide battery voltage range from 150 V to 920 V.
Wolfspeed has introduced its fifth-generation silicon carbide (SiC) MOSFET technology for 1200 V and 750 V automotive and industrial applications. It offers a 27% reduction in specific on-resistance (RSP) compared to current commercial 1200 V alternatives. At 175°C, the chip-level RSP is 3.4 mΩ-cm² for the 1200 V node (QEM50120-25D10) and 2.0 mΩ-cm² for the 750 V node (QEM50075-025D10). This technology limits the RDS(ON) distribution to within ±18% for both voltage nodes.

Efficient Power Conversion (EPC) announced the start of mass production for its EPC2378 25 V eGaN power transistor, optimized for synchronous rectification on the secondary side of 48 V-5 V or 12 V LLC converters. The device features a typical RDSon of 410 µΩ and a low gate charge figure of merit, capable of handling a continuous drain current of up to 101 A. It comes in a 3.3 mm x 3.3 mm PQFN package with a backside thermal pad for enhanced heat dissipation. To accelerate system evaluation, EPC also released the companion EPC90185 development board.
Onsemi has introduced its GaNEXUS GaN power portfolio, initially offering samples of discrete components covering a breakdown voltage range from 40 V to 650 V. The series includes 650 V GaNEXUS Smart devices with integrated protection circuits to simplify layout. The portfolio is designed for AI data center infrastructure and industrial power architectures, offering efficiency improvements of 0.5% to 2% and volumetric power density increases of 1.5x to 2x, depending on the circuit topology. The high switching speed enables a 30% to 60% reduction in magnetic component size. These components are available in TOLL, TOLT, and dual-cooling packages and can interface with Onsemi's Treo control platform.

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