en.Wedoany.com Reported - United Monolithic Semiconductors (UMS) has launched the CHA8265-98F three-stage high-power amplifier, operating over a frequency range of 27.5 GHz to 31 GHz. It is designed for Ka-band satellite communications, 5G infrastructure, and other microwave systems requiring high output power and efficiency.

When operating at a drain voltage of 25 V, the amplifier delivers a typical saturated output power of 25 W with a power-added efficiency (PAE) of approximately 30%. Under linear operating conditions, it provides 10 W output power with a third-order intermodulation distortion of -25 dBc, while maintaining PAE above 25%. According to UMS, the device supports a drain bias range of 18 V to 25 V, enabling saturated output power from 15 W to 25 W depending on the operating voltage.

The CHA8265-98F is manufactured using GaN-on-SiC HEMT technology, a semiconductor process commonly used in high-frequency and high-power RF applications. The device is offered as a bare die, with both input and output matched to 50 Ω, facilitating integration into various microwave system designs.

According to UMS, the amplifier is designed for satellite communication terminals, 5G radio equipment, and other microwave platforms requiring high output power in the Ka-band spectrum. Its combination of output power, efficiency, and operating bandwidth aims to support system designers in developing next-generation wireless and satellite communication devices.