Wedoany.com Report on Feb 26th, STMicroelectronics has recently introduced the MasterGaN6 device, the second-generation product in its MasterGaN half-bridge series of power integrated circuits. This new system-in-package integrates an updated BCD gate driver and a high-performance GaN power transistor with an on-resistance of 140mΩ.

Building upon earlier products, the MasterGaN6 GaN power IC expands functionality by adding dedicated pins for fault reporting and standby control. These new features support system monitoring and energy management optimization. The device also integrates a low-dropout regulator and bootstrap diodes to maintain proper gate drive operation and reduce the need for external components.

The driver's fast-switching design, achieved by reducing minimum on-time and propagation delay, supports high-frequency operation, helping engineers shrink the overall circuit size. Its ultra-fast wake-up capability also enhances burst-mode performance, improving efficiency under light-load conditions.

The MasterGaN6 GaN power IC includes comprehensive built-in protection features such as cross-conduction prevention, thermal shutdown, and undervoltage lockout. These protections enable designers to achieve lower material costs, a smaller PCB footprint, and a more streamlined layout.

Supporting currents up to 10A, MasterGaN6 is suitable for consumer and industrial systems, including battery chargers, power adapters, lighting power supplies, and DC-to-AC solar microinverters. The half-bridge architecture can be applied to various power topologies, including active clamp flyback, resonant LLC converters, buck-boost configurations, and power factor correction stages.

To support evaluation and design, STMicroelectronics provides the EVLMG6 evaluation board and has added the MasterGaN6 device model to the eDesignSuite PCB thermal simulator to assist with thermal analysis and design verification.

These devices are currently in production and come in a 9mm × 9mm QFN package.