A research team from Delft University of Technology in the Netherlands has recently published important findings in Nature Communications, achieving the first observation of quantum spin transport in graphene without reliance on external magnetic fields. This discovery lays the foundation for developing next-generation spintronic devices, potentially advancing quantum computing and efficient storage technologies.

The team successfully induced quantum spin Hall effects by combining graphene with the magnetic material CrPS₄. Project leader Talieh Ghiasi stated: "We achieved spin-direction-dependent electron transport in graphene, removing a key barrier to chip-integrated quantum devices." Traditional methods require strong magnetic fields, making practical applications challenging.

Experimental data shows that the spin flow generated by this novel structure has topological protection characteristics, maintaining information integrity over transmission distances of tens of micrometers. "Topologically protected spin flow is highly robust against defects and works reliably even under non-ideal conditions," Ghiasi explained. This property is crucial for building practical spintronic circuits.

This breakthrough opens new pathways for developing ultra-thin spintronic devices based on graphene. The researchers note that such devices could serve as basic units in quantum computing, enabling effective connections between qubits. The team’s next steps include exploring specific applications of this technology in quantum information processing and efficient memory.