Navitas Semiconductor and GlobalFoundries' First U.S.-Manufactured Fifth-Generation GaNFast Devices to Ship in September

2026-09-04 14:23
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en.Wedoany.com Reported - On September 1, Navitas Semiconductor confirmed that the first U.S.-manufactured products of its fifth-generation GaNFast power semiconductors will begin shipping in September. The devices are produced at GlobalFoundries' facility in Burlington, Vermont, utilizing a 200mm GaN-on-Si manufacturing platform, with the initial products being 650V GaN FETs.

The launch products are offered in five on-resistance (RDS(on)) ratings: 11mΩ, 18mΩ, 50mΩ, 120mΩ, and 150mΩ. According to the delivery schedule announced by both parties, the first wafers will ship in September, enter the internal sample stage in October, and samples for select strategic customers are planned to be provided by the end of 2026.

Navitas Semiconductor has adapted its Gen 5 GaNFast device architecture and manufacturing processes to GlobalFoundries' 200mm GaN-on-Si process. The collaboration scope covers both GaNFast FETs and power integrated circuits, targeting high-power applications such as AI data centers, high-performance computing, industrial electrification, and critical infrastructure. GaNFast power ICs integrate power switches, drivers, control, sensing, and protection functions.

The two parties signed a long-term strategic cooperation agreement in November 2025, under which they committed to developing and manufacturing next-generation GaN devices at GlobalFoundries' Burlington facility, with development scheduled to begin in early 2026 and production to commence within 2026. The September shipment of the first wafers marks the transition of this collaboration from early-stage process development to actual product delivery.

GlobalFoundries' Burlington site handles the high-voltage GaN-on-Si manufacturing process, while Navitas Semiconductor provides GaN devices, process design kits, and device architecture technology. The product parameters announced by both parties this time focus on 650V GaN FETs; the number of initial wafers, customer order volumes, and the specific shipment timeline for Gen 5 GaNFast power ICs have not yet been disclosed.

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