en.Wedoany.com Reported - MACOM Technology Solutions has announced a new chip-level thermal via process based on its proprietary AlGaAs diode technology. This process routes RF signals and ground paths vertically through the semiconductor chip itself, replacing traditional chip-to-bond wire connections and copper pillar-based surface mount technology (SMT). By eliminating conventional external bond wires, the technology reduces assembly complexity, improves manufacturing consistency, and minimizes parasitic inductance and resistance, achieving low insertion loss and high isolation at millimeter-wave frequencies.
Alongside the process announcement, MACOM introduced the first product utilizing this technology: the MASW-011261, a broadband SP2T switch operating in the 60 to 110 GHz range. The switch features a compact 1.87 mm x 1.98 mm chip-scale package, with a typical insertion loss of 0.9 dB, isolation of 30 dB, and switching speed below 20 ns. MACOM positions this process for high-frequency control functions, including switches and limiters, and will showcase the technology this week at the International Microwave Symposium (IMS 2026) in Boston.
Key features of the process include: vertical routing—routing RF signals and ground paths directly vertically through the AlGaAs chip, eliminating traditional bond wires; parasitic reduction—significantly reducing parasitic effects to ensure high signal integrity and reliable performance deep into the millimeter-wave spectrum; first chip—launched via the MASW-011261, a switch with 0.9 dB insertion loss and switching speed below 20 ns; target applications—customized for high-frequency RF control infrastructure, including switches, limiters, and aerospace/defense systems; live demonstration—MACOM will showcase the thermal via process at booth #17035 during IMS 2026 (June 9–11).
MACOM President and CEO Stephen G. Daly stated that the new AlGaAs process based on thermal vias can reduce assembly complexity while improving high-frequency performance of integrated components. As advanced packaging continues to dominate discussions on artificial intelligence and high-speed networking, MACOM's announcement highlights that packaging innovation is equally critical in the ultra-high-frequency RF and millimeter-wave domains. Traditional bond wires introduce unpredictable parasitic effects that degrade signals at extremely high frequencies such as 100 GHz. By shifting the interconnect architecture inside the chip through the thermal via process, MACOM bridges the gap between raw silicon capabilities and practical surface-mount manufacturing. For devices targeting next-generation satellite communications, 5G/6G wireless backhaul, and high-frequency radar hardware, this represents a significant advancement in high-yield, high-frequency component assembly.
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