en.Wedoany.com Reported - On June 15, Iron Device was selected as a joint research institution for a government-supported project aimed at developing embedded power module technology for electric vehicle drive circuits.

The consortium will develop gallium nitride (GaN) modules for electric vehicles operating in a 650-volt (V) environment. The lead institution, Semi-Powerex, is responsible for module integration. The Korea Electronics Technology Institute (KETI), the Korea Automotive Technology Institute (KATECH), Seoul National University, Hanyang University, and Iron Device participate as joint research institutions. The project will run for approximately three and a half years, ending on December 31, 2029, with a total budget of about KRW 8.3 billion.

Iron Device will develop a 2500-volt (V) dual-channel isolated GaN gate driver. GaN devices are used in high-speed switching power systems, including data center power supplies, high-speed electric vehicle chargers, and industrial power supplies. The gate driver controls the switching operation of the GaN device. This gate driver supports 5-ampere (A) and 7A drive currents and is packaged to withstand a breakdown voltage of 2500V.

The company plans to extend this technology for application in electric vehicle onboard chargers (OBC), high-speed electric vehicle charging stations, data center DC-DC converters, and energy storage systems (ESS) inverters.

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