en.Wedoany.com Reported - Mitsubishi Electric Corporation has introduced fifth-generation silicon carbide (SiC) MOSFET bare die samples, developed specifically for electric vehicle powertrain applications. The company plans to begin shipping samples sequentially from the end of June, targeting traction inverters and eAxle systems for electric vehicles (EVs), plug-in hybrid electric vehicles (PHEVs), and other electrified vehicle platforms.

The new products leverage Mitsubishi Electric's proprietary trench-gate SiC MOSFET technology, designed to achieve lower conduction losses compared to previous generations. The fifth-generation devices offer approximately 25% lower on-resistance than existing solutions, contributing to improved overall power conversion efficiency in automotive traction systems.

Lower on-resistance directly reduces conduction losses in inverters, enhancing drivetrain efficiency and enabling more effective utilization of battery energy. Vehicle manufacturers can thereby extend driving range while supporting more compact and efficient powertrain architectures.

Mitsubishi Electric states that the new SiC MOSFET bare die are designed to support the ongoing evolution of high-performance inverters and integrated eAxle systems, where power density and efficiency remain key design objectives. These devices are expected to facilitate system miniaturization and enhanced power performance, driving the industry toward higher-efficiency electrified vehicles.

Advances in manufacturing process technology aim to minimize long-term performance degradation and reduce fluctuations in critical parameters such as power loss and on-resistance over the device lifecycle. Maintaining stable electrical characteristics over extended operation is particularly important in automotive environments, which demand high reliability and durability.

By combining lower losses with improved consistency and long-term stability, the new SiC MOSFETs are designed to enhance the durability and operational performance of xEV inverters and eAxle systems.

Mitsubishi Electric plans to showcase the fifth-generation SiC MOSFET bare die at PCIM Expo & Conference in Nuremberg, Germany, in 2026, as well as at other industry exhibitions in Japan, China, and other international markets. The product further expands the company's silicon carbide portfolio for next-generation automotive electrification applications.

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