en.Wedoany.com Reported - RootSemicon announced on June 11 that it is leading a national project to develop 3300-volt silicon carbide (SiC) power modules. The project is led by South Korea's Ministry of Trade, Industry and Energy and managed by the Korea Evaluation Institute of Industrial Technology (KEIT), with a total budget of approximately 7.7 billion KRW and a duration of four years.
RootSemicon will develop SiC power semiconductor modules for power transmission and distribution systems. Under this collaboration framework, RootSemicon is responsible for manufacturing SiC devices, SemiPowerEx handles packaging them into modules, Intec Electric & Electronic acts as the demand-side buyer of finished products, and Arke supplies the epitaxial wafers required for the devices. Compared to traditional silicon (Si) devices, SiC semiconductors operate more stably under high-voltage conditions. The devices being developed target 3300V applications, with potential uses including power grids, high-speed electric vehicle charging stations, railways, and semiconductor solid-state circuit breakers (SSCB).
According to industry insiders, the current operating voltage supported by South Korea's domestic technology for SiC devices is 1700V. Products exceeding this voltage level are primarily sourced from overseas suppliers such as Infineon Technologies and Mitsubishi Electric. RootSemicon stated that it has already mastered the mass production design and packaging capabilities for 1200V-class SiC MOSFET devices, achieving a yield rate of 90%. Vice President Jung Eun-sik noted that the company will leverage its expertise in SiC power semiconductor design and high-yield testing to support the project's advancement.
Additionally, RootSemicon was recently selected as the lead entity for another government-funded project with a budget of 8.15 billion KRW, focusing on the development of power modules for water electrolysis systems.
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